Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTM60A11FT1G Datasheet

APTM60A11FT1G Datasheet
Total Pages: 5
Size: 139.35 KB
Microsemi
This datasheet covers 1 part numbers: APTM60A11FT1G
APTM60A11FT1G Datasheet Page 1
APTM60A11FT1G Datasheet Page 2
APTM60A11FT1G Datasheet Page 3
APTM60A11FT1G Datasheet Page 4
APTM60A11FT1G Datasheet Page 5
APTM60A11FT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

40A

Rds On (Max) @ Id, Vgs

132mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

10552pF @ 25V

Power - Max

390W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1