APTM20UM09SG Datasheet
APTM20UM09SG Datasheet
Total Pages: 7
Size: 285.29 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APTM20UM09SG
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 217nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 12300pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package Module Package / Case J3 Module |
