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APTM120H57FT3G Datasheet

APTM120H57FT3G Datasheet
Total Pages: 6
Size: 299.16 KB
Microsemi
This datasheet covers 1 part numbers: APTM120H57FT3G
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APTM120H57FT3G

Microsemi

APTM120H57FT3G

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

17A

Rds On (Max) @ Id, Vgs

684mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

187nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

5155pF @ 25V

Power - Max

390W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3