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APTM120A80FT1G Datasheet

APTM120A80FT1G Datasheet
Total Pages: 5
Size: 139.33 KB
Microsemi
This datasheet covers 1 part numbers: APTM120A80FT1G
APTM120A80FT1G Datasheet Page 1
APTM120A80FT1G Datasheet Page 2
APTM120A80FT1G Datasheet Page 3
APTM120A80FT1G Datasheet Page 4
APTM120A80FT1G Datasheet Page 5
APTM120A80FT1G

Microsemi

APTM120A80FT1G

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

14A

Rds On (Max) @ Id, Vgs

960mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6696pF @ 25V

Power - Max

357W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1