APTM100DA18T1G Datasheet
APTM100DA18T1G Datasheet
Total Pages: 5
Size: 145.13 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APTM100DA18T1G
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 216mOhm @ 33A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V FET Feature - Power Dissipation (Max) 657W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP1 Package / Case SP1 |
