APTM100A23SCTG Datasheet
APTM100A23SCTG Datasheet
Total Pages: 7
Size: 295.3 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APTM100A23SCTG
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Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 36A Rds On (Max) @ Id, Vgs 270mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V Power - Max 694W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
