APTC80H29T1G Datasheet
APTC80H29T1G Datasheet
Total Pages: 6
Size: 324.5 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APTC80H29T1G
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Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 15A Rds On (Max) @ Id, Vgs 290mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2254pF @ 25V Power - Max 156W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
