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APTC80DA15T1G Datasheet

APTC80DA15T1G Datasheet
Total Pages: 6
Size: 313.17 KB
Microsemi
This datasheet covers 1 part numbers: APTC80DA15T1G
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APTC80DA15T1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4507pF @ 25V

FET Feature

-

Power Dissipation (Max)

277W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1