APT6M100K Datasheet
APT6M100K Datasheet
Total Pages: 4
Size: 115.35 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APT6M100K
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 25V FET Feature - Power Dissipation (Max) 225W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 [K] Package / Case TO-220-3 |
