APT30SCD120B Datasheet
|
Manufacturer Microsemi Corporation Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 99A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 30A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 600µA @ 1200V Capacitance @ Vr, F 2100pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 99A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 30A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 600µA @ 1200V Capacitance @ Vr, F 2100pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package D3Pak Operating Temperature - Junction -55°C ~ 150°C |
