APT11GP60BDQBG Datasheet
APT11GP60BDQBG Datasheet
Total Pages: 7
Size: 212.91 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APT11GP60BDQBG
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Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 45A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 11A Power - Max 187W Switching Energy 46µJ (on), 90µJ (off) Input Type Standard Gate Charge 40nC Td (on/off) @ 25°C 7ns/29ns Test Condition 400V, 11A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
