APT1001RBN Datasheet
APT1001RBN Datasheet
Total Pages: 4
Size: 50.79 KB
Microsemi
Website: https://www.microsemi.com/
This datasheet covers 1 part numbers:
APT1001RBN
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Manufacturer Microsemi Corporation Series POWER MOS IV® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-247-3 |
