AOWF12N65 Datasheet
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package - Package / Case TO-262-3 Full Pack, I²Pak |
