AOW2918 Datasheet
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3430pF @ 50V FET Feature - Power Dissipation (Max) 2.1W (Ta), 267W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
