AON1606_001 Datasheet
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 275mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 850nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 62.5pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN (1.0 x 0.60) Package / Case 3-UFDFN |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 275mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 850nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 62.5pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN (1.0 x 0.60) Package / Case 3-UFDFN |
