AO3420L_103 Datasheet
|
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3L Package / Case TO-236-3, SC-59, SOT-23-3 |
