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AO3160E Datasheet

AO3160E Datasheet
Total Pages: 5
Size: 322.38 KB
Alpha & Omega Semiconductor
This datasheet covers 1 part numbers: AO3160E
AO3160E Datasheet Page 1
AO3160E Datasheet Page 2
AO3160E Datasheet Page 3
AO3160E Datasheet Page 4
AO3160E Datasheet Page 5
AO3160E

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

40mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

3.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

900pC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9.5pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.39W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23A-3

Package / Case

TO-236-3, SC-59, SOT-23-3