4N26(SHORT Datasheet
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Manufacturer Toshiba Semiconductor and Storage Series - Number of Channels 1 Voltage - Isolation 2500Vrms Current Transfer Ratio (Min) 20% @ 10mA Current Transfer Ratio (Max) - Turn On / Turn Off Time (Typ) - Rise / Fall Time (Typ) 2µs, 200µs Input Type DC Output Type Transistor with Base Voltage - Output (Max) 30V Current - Output / Channel 100mA Voltage - Forward (Vf) (Typ) 1.15V Current - DC Forward (If) (Max) 80mA Vce Saturation (Max) 500mV Operating Temperature -55°C ~ 100°C Mounting Type Through Hole Package / Case 6-DIP (0.300", 7.62mm) Supplier Device Package 6-DIP |
Manufacturer Toshiba Semiconductor and Storage Series - Number of Channels 1 Voltage - Isolation 2500Vrms Current Transfer Ratio (Min) 20% @ 10mA Current Transfer Ratio (Max) - Turn On / Turn Off Time (Typ) - Rise / Fall Time (Typ) 2µs, 200µs Input Type DC Output Type Transistor with Base Voltage - Output (Max) 30V Current - Output / Channel 100mA Voltage - Forward (Vf) (Typ) 1.15V Current - DC Forward (If) (Max) 80mA Vce Saturation (Max) 500mV Operating Temperature -55°C ~ 100°C Mounting Type Through Hole Package / Case 6-DIP (0.300", 7.62mm) Supplier Device Package 6-DIP |
Manufacturer Toshiba Semiconductor and Storage Series - Number of Channels 1 Voltage - Isolation 2500Vrms Current Transfer Ratio (Min) 20% @ 10mA Current Transfer Ratio (Max) - Turn On / Turn Off Time (Typ) - Rise / Fall Time (Typ) 2µs, 200µs Input Type DC Output Type Transistor with Base Voltage - Output (Max) 30V Current - Output / Channel 100mA Voltage - Forward (Vf) (Typ) 1.15V Current - DC Forward (If) (Max) 80mA Vce Saturation (Max) 500mV Operating Temperature -55°C ~ 100°C Mounting Type Through Hole Package / Case 6-DIP (0.300", 7.62mm) Supplier Device Package 6-DIP |
