3N164 Datasheet
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 300Ohm @ 100µA, 20V Vgs(th) (Max) @ Id 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V FET Feature - Power Dissipation (Max) 375mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-72 Package / Case TO-206AF, TO-72-4 Metal Can |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 250Ohm @ 100µA, 20V Vgs(th) (Max) @ Id 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V FET Feature - Power Dissipation (Max) 375mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-72 Package / Case TO-206AF, TO-72-4 Metal Can |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 250Ohm @ 100µA, 20V Vgs(th) (Max) @ Id 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V FET Feature - Power Dissipation (Max) 375mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-72 Package / Case TO-206AF, TO-72-4 Metal Can |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 250Ohm @ 100µA, 20V Vgs(th) (Max) @ Id 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 15V FET Feature - Power Dissipation (Max) 375mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-72 Package / Case TO-206AF, TO-72-4 Metal Can |