3LN01S-TL-E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 3.7Ohm @ 80mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SMCP Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 3.7Ohm @ 80mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SMCP Package / Case SC-75, SOT-416 |
