2SK4150TZ-E Datasheet
2SK4150TZ-E Datasheet
Total Pages: 7
Size: 82.07 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
2SK4150TZ-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 5.7Ohm @ 200mA, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 80pF @ 25V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
