2SK4124-1E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 46.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 170W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P-3L Package / Case TO-3P-3, SC-65-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 430mOhm @ 8A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 46.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 170W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PB Package / Case TO-3P-3, SC-65-3 |
