2SK3821-E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package SMP Package / Case TO-220-3, Short Tab |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SMP-FD Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
