2SK3820-DL-1E Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 26A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 13A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 26A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 13A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V FET Feature - Power Dissipation (Max) 1.65W (Ta), 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SMP-FD Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
