2SK3747 Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V Vgs (Max) ±35V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V FET Feature - Power Dissipation (Max) 3W (Ta), 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PML Package / Case TO-3P-3 Full Pack |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V Vgs (Max) ±35V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V FET Feature - Power Dissipation (Max) 3W (Ta), 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF-3 Package / Case SC-94 |
