2SK3403(Q) Datasheet
2SK3403(Q) Datasheet
Total Pages: 6
Size: 301.15 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SK3403(Q)
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FL Package / Case TO-220-3, Short Tab |
