2SK2315TYTR-E Datasheet
2SK2315TYTR-E Datasheet
Total Pages: 8
Size: 79.76 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
2SK2315TYTR-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 4V Rds On (Max) @ Id, Vgs 450mOhm @ 1A, 4V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 173pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package UPAK Package / Case TO-243AA |
