2SJ681(Q) Datasheet
2SJ681(Q) Datasheet
Total Pages: 6
Size: 186.2 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SJ681(Q)
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 170mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V FET Feature - Power Dissipation (Max) 20W (Ta) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package PW-MOLD2 Package / Case TO-251-3 Stub Leads, IPak |
