2SJ656 Datasheet
2SJ656 Datasheet
Total Pages: 4
Size: 46.69 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
2SJ656
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 75.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 2W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220ML Package / Case TO-220-3 Full Pack |
