2SD2406-Y(F) Datasheet
2SD2406-Y(F) Datasheet
Total Pages: 4
Size: 142.94 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SD2406-Y(F)
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V Power - Max 25W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |