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2SD2406-Y(F) Datasheet

2SD2406-Y(F) Datasheet
Total Pages: 4
Size: 142.94 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SD2406-Y(F)
2SD2406-Y(F) Datasheet Page 1
2SD2406-Y(F) Datasheet Page 2
2SD2406-Y(F) Datasheet Page 3
2SD2406-Y(F) Datasheet Page 4
2SD2406-Y(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

4A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 300mA, 3A

Current - Collector Cutoff (Max)

30µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 500mA, 5V

Power - Max

25W

Frequency - Transition

8MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS