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2SD2257 Datasheet

2SD2257 Datasheet
Total Pages: 4
Size: 154.39 KB
Toshiba Semiconductor and Storage
This datasheet covers 6 part numbers: 2SD2257,Q(J, 2SD2257,NIKKIQ(J, 2SD2257,KEHINQ(J, 2SD2257(Q,M), 2SD2257(CANO,Q,M), 2SD2257(CANO,A,Q)
2SD2257 Datasheet Page 1
2SD2257 Datasheet Page 2
2SD2257 Datasheet Page 3
2SD2257 Datasheet Page 4
2SD2257,Q(J

Toshiba Semiconductor and Storage

2SD2257,Q(J

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS
2SD2257,NIKKIQ(J

Toshiba Semiconductor and Storage

2SD2257,NIKKIQ(J

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS
2SD2257,KEHINQ(J

Toshiba Semiconductor and Storage

2SD2257,KEHINQ(J

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS
2SD2257(Q,M)

Toshiba Semiconductor and Storage

2SD2257(Q,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS
2SD2257(CANO,Q,M)

Toshiba Semiconductor and Storage

2SD2257(CANO,Q,M)

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS
2SD2257(CANO,A,Q)

Toshiba Semiconductor and Storage

2SD2257(CANO,A,Q)

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1.5mA, 1.5A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 2A, 2V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS