2SD1012G-SPA-AC Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 50mA, 2V Power - Max 250mW Frequency - Transition 250MHz Operating Temperature 125°C (TJ) Mounting Type Through Hole Package / Case 3-SIP Supplier Device Package 3-SPA |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA, 2V Power - Max 250mW Frequency - Transition 250MHz Operating Temperature 125°C (TJ) Mounting Type Through Hole Package / Case 3-SIP Supplier Device Package 3-SPA |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 50mA, 2V Power - Max 250mW Frequency - Transition 250MHz Operating Temperature 125°C (TJ) Mounting Type Through Hole Package / Case 3-SIP Supplier Device Package 3-SPA |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA, 2V Power - Max 250mW Frequency - Transition 250MHz Operating Temperature 125°C (TJ) Mounting Type Through Hole Package / Case 3-SIP Supplier Device Package 3-SPA |
