2SC5551AE-TD-E Datasheet
2SC5551AE-TD-E Datasheet
Total Pages: 6
Size: 293.9 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 2 part numbers:
2SC5551AE-TD-E, 2SC5551AF-TD-E
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 3.5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA, 5V Current - Collector (Ic) (Max) 300mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 3.5GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 1.3W DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 50mA, 5V Current - Collector (Ic) (Max) 300mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |