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2SC5459(TOJS Datasheet

2SC5459(TOJS Datasheet
Total Pages: 4
Size: 161.1 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SC5459(TOJS,Q,M)
2SC5459(TOJS Datasheet Page 1
2SC5459(TOJS Datasheet Page 2
2SC5459(TOJS Datasheet Page 3
2SC5459(TOJS Datasheet Page 4
2SC5459(TOJS,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

400V

Vce Saturation (Max) @ Ib, Ic

1V @ 150mA, 1.2A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 300mA, 5V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS