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2SC5439(F) Datasheet

2SC5439(F) Datasheet
Total Pages: 4
Size: 152.14 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SC5439(F)
2SC5439(F) Datasheet Page 1
2SC5439(F) Datasheet Page 2
2SC5439(F) Datasheet Page 3
2SC5439(F) Datasheet Page 4
2SC5439(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

8A

Voltage - Collector Emitter Breakdown (Max)

450V

Vce Saturation (Max) @ Ib, Ic

1V @ 640mA, 3.2A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

14 @ 1A, 5V

Power - Max

2W

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS