2SC5415AE-TD-E Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6.7GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 9dB Power - Max 800mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6.7GHz Noise Figure (dB Typ @ f) 1.1dB @ 1GHz Gain 9dB Power - Max 800mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package PCP |
