2SC5227A-5-TB-E Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1dB @ 1GHz Gain 12dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 20mA, 5V Current - Collector (Ic) (Max) 70mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 7GHz Noise Figure (dB Typ @ f) 1dB @ 1GHz Gain 12dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V Current - Collector (Ic) (Max) 70mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package 3-CP |
