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2SB817C-1E Datasheet

2SB817C-1E Datasheet
Total Pages: 4
Size: 160.42 KB
ON Semiconductor
This datasheet covers 1 part numbers: 2SB817C-1E
2SB817C-1E Datasheet Page 1
2SB817C-1E Datasheet Page 2
2SB817C-1E Datasheet Page 3
2SB817C-1E Datasheet Page 4
2SB817C-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

12A

Voltage - Collector Emitter Breakdown (Max)

140V

Vce Saturation (Max) @ Ib, Ic

2V @ 500mA, 5A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 5V

Power - Max

120W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P-3L