2SB1481(TOJS Datasheet
2SB1481(TOJS Datasheet
Total Pages: 4
Size: 157.13 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
2SB1481(TOJS,Q,M)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A Current - Collector Cutoff (Max) 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
