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2SB1375 Datasheet

2SB1375 Datasheet
Total Pages: 5
Size: 162.07 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: 2SB1375,CLARIONF(M
2SB1375 Datasheet Page 1
2SB1375 Datasheet Page 2
2SB1375 Datasheet Page 3
2SB1375 Datasheet Page 4
2SB1375 Datasheet Page 5
2SB1375,CLARIONF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 200mA, 2A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 500mA, 5V

Power - Max

2W

Frequency - Transition

9MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS