2SA2169-TL-E Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 580mV @ 250mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V Power - Max 950mW Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package 2-TP-FA |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 580mV @ 250mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V Power - Max 950mW Frequency - Transition 130MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 360mV @ 250mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V Power - Max 950mW Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TP |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 360mV @ 250mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V Power - Max 950mW Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package 2-TP-FA |
