2N7639-GA Datasheet
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 15A (Tc) (155°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 105mOhm @ 15A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1534pF @ 35V FET Feature - Power Dissipation (Max) 172W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-257 Package / Case TO-257-3 |
