2N7638-GA Datasheet
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8A (Tc) (158°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 170mOhm @ 8A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 720pF @ 35V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-276 Package / Case TO-276AA |
