2N7053 Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 1W Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-226-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 1W Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-226-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 1W Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-226-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 625mW Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 1W Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-226-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 625mW Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 200nA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V Power - Max 1W Frequency - Transition 200MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223-4 |
