2N7002ET1G Datasheet
2N7002ET1G Datasheet
Total Pages: 6
Size: 199.65 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
2N7002ET1G
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V FET Feature - Power Dissipation (Max) 300mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
