2N6341 Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10A, 2V Power - Max 200W Frequency - Transition 40MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-204 (TO-3) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10A, 2V Power - Max 200W Frequency - Transition 40MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-204 (TO-3) |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.8V @ 2.5A, 25A Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10A, 2V Power - Max 200W Frequency - Transition 40MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-204 (TO-3) |
