2N6028RLRPG Datasheet
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Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 600mV Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 25µA Current - Peak 150nA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer ON Semiconductor Series - Voltage 40V Power Dissipation (Max) 300mW Voltage - Output 11V Voltage - Offset (Vt) 1.6V Current - Gate to Anode Leakage (Igao) 10nA Current - Valley (Iv) 50µA Current - Peak 2µA Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
