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2N6027RL1G Datasheet

2N6027RL1G Datasheet
Total Pages: 8
Size: 148.85 KB
ON Semiconductor
This datasheet covers 2 part numbers: 2N6027RL1G, 2N6027RL1
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2N6027RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Voltage

40V

Power Dissipation (Max)

300mW

Voltage - Output

11V

Voltage - Offset (Vt)

1.6V

Current - Gate to Anode Leakage (Igao)

10nA

Current - Valley (Iv)

50µA

Current - Peak

2µA

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

2N6027RL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Voltage

40V

Power Dissipation (Max)

300mW

Voltage - Output

11V

Voltage - Offset (Vt)

1.6V

Current - Gate to Anode Leakage (Igao)

10nA

Current - Valley (Iv)

50µA

Current - Peak

2µA

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)