2N3820_D26Z Datasheet
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Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 300µA @ 10V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 8V @ 10µA Input Capacitance (Ciss) (Max) @ Vds 32pF @ 10V Resistance - RDS(On) - Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 20V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 300µA @ 10V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 8V @ 10µA Input Capacitance (Ciss) (Max) @ Vds 32pF @ 10V Resistance - RDS(On) - Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
