2N2222 Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature - Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |